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Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof

机译:具有超晶格结构的铁电薄膜,其制造方法,铁电元件及其制造方法

摘要

At least two types of dielectric materials such as oxide nanosheets having a layered perovskite structure that differ from each other are laminated, and the nanosheets are bonded to each other via an ionic material, thereby producing a superlattice structure-having ferroelectric thin film. Having the layered structure, the film can exhibit ferroelectricity as a whole, though not using a ferroelectric material therein. Accordingly, there is provided a ferroelectric film based on a novel principle, which is favorable for ferroelectric memories and others and which is free from a size effect even though extremely thinned.
机译:层叠至少两种类型的介电材料,例如具有彼此不同的钙钛矿结构的氧化物纳米片,并且该纳米片通过离子材料彼此结合,从而产生具有超晶格结构的铁电薄膜。具有层状结构,该膜整体上可以显示出铁电性,尽管其中不使用铁电材料。因此,提供了基于新颖原理的铁电膜,该铁电膜对铁电存储器等有利,并且即使极薄也没有尺寸效应。

著录项

  • 公开/公告号US9543500B2

    专利类型

  • 公开/公告日2017-01-10

    原文格式PDF

  • 申请/专利权人 MINORU OSADA;TAKAYOSHI SASAKI;

    申请/专利号US201113878571

  • 发明设计人 MINORU OSADA;TAKAYOSHI SASAKI;

    申请日2011-10-04

  • 分类号B32B7/02;B32B27/32;H01L29/04;H01L41/18;G11C11/22;H01L21/02;H01L27/115;C30B19/06;H01G4/12;H01L41/187;H01G4/33;H01L41/317;H01L49/02;

  • 国家 US

  • 入库时间 2022-08-21 13:41:09

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