The device ferroelu00e9trico graphene and control opto electronic memory device ferroelu00e9trico graphene

摘要

Abstract of the disclosure in accordance with an embodiment of the invention, there is provided a graphene ferroelectric device.The device comprises the graphene transistor channel and the ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising linear polarization at the first applied gate voltage less than the threshold voltage, and the hysteretic polarization at the second applied gate voltage great Er than the threshold voltage.The device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and the low resistance state in response to photoillumination of the device. Translation of the summary summary invention patent: "device ferroelu00e9trico graphene and control opto electronic memory device ferroelu00e9trico graphene.In accordance with a form of implementation of the invention, it is provided a device ferroelu00e9trico graphene.The device is characterized by the fact that comprises a graphene transistor channel and a door ferroelu00e9trica channel transistor of graphene, and the door ferroelu00e9trica characterized by the fact that comprises a linear polarization in a voltage applied by the first door. And less than a voltage limit.And a polarization histeru00e9tica in a voltage applied for a second time door more than the voltage limit. The device ferroelu00e9trico can be configured to pass through optical switching of the channel of graphene transistor between a state of high resistance state and a low resistance in response to the fotoiluminau00e7u00e3o device.