Poly2,7-bis(2-thiophene)-9,9-dimethylxanthene, method of obtaining and application in a semiconductor material

摘要

the invention relates to poly [2,7 - bis (2 - thiophen-2-ethanol) - 9.9 - dimetyloksantenu], formula 1, intended for construction equipment optoelektonicznych.the subject of the invention is also a process for the production of poly [2,7 - bis (2 - thiophen-2-ethanol) - 9.9 - dimetyloksantenu] of model 1, which is that in the first stage, 2.7 - dibromo-4,4 - 9.9 - dimetyloksantenu undergo reaction with 4,4,5,5 - tetramethyl - 2,1,3 - dioksoborolanem in solution trietyloaminy (net3) and dioksa nu in the presence of a catalyst palladium - pd (pph3) 4.then in the second stage reaction synthesis is 2.7 - bis (4,4,5,5 - tetramethyl - 2,1,3 - dioksoborolan - 2 - yl) - 9.9 - dimetyloksantenu with 2 - bromotiofenem, whereby the reaction is in the solution 2 - etoksyetanolu and potassium carbonate in the boiling point of solvent in an atmosphere of nitrogen by 24 hours, and the product obtained in the form of 2,7 - bis (2 - thiophen-2-ethanol) - 99 - dimetyloksantenu subjected elektropolimeryzacji. the solution also includes the application of poly [2,7 - bis (2 - thiophen-2-ethanol) - 9.9 - dimetyloksantenu] of model 1 for the manufacture of semiconductor material containing an active layer in the form of a film elektropolimerowego obtained from poly [2,7 - bis (2 - thiophen-2-ethanol) - 9.9 - dimetyloksantenu] imposed on polikrysta heavy platinum electrodes.