首页> 外国专利> EDGE-TYPE LIGHT-EMITTING DIODE, SURFACE LIGHT SOURCE COMPRISING EDGE-TYPE LIGHT EMITTING DIODES, AND METHOD FOR MANUFACTURING EDGE-TYPE LIGHT EMITTING DIODE

EDGE-TYPE LIGHT-EMITTING DIODE, SURFACE LIGHT SOURCE COMPRISING EDGE-TYPE LIGHT EMITTING DIODES, AND METHOD FOR MANUFACTURING EDGE-TYPE LIGHT EMITTING DIODE

机译:边缘型发光二极管,包括边缘型发光二极管的表面光源以及制造边缘型发光二极管的方法

摘要

The present invention relates to an edge-type light-emitting diode, a surface light source comprising edge-type light-emitting diodes, and a method for manufacturing an edge-type light-emitting diode. More specifically, the present invention relates to an edge-type light-emitting diode in which efficiency of extraction of light in a lateral direction is improved, and also relates to a surface light source comprising edge-type light-emitting diodes and a method for manufacturing an edge-type light-emitting diode. An edge-type light-emitting diode according to an embodiment of the present invention comprises: a substrate on which first light extraction structures are formed on respective sides thereof; a first reflection layer which is formed on one surface of the substrate; a semiconductor stack structure which is formed on an opposite surface of the substrate facing the one surface of the substrate, and which includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; and a second reflection layer which is formed on the semiconductor stack structure. In this case, light emitted from the active layer may be emitted through the sides of the substrate or sides of the semiconductor stack structure.;COPYRIGHT KIPO 2017
机译:边缘型发光二极管,包括边缘型发光二极管的面光源以及制造边缘型发光二极管的方法技术领域本发明涉及边缘型发光二极管,包括边缘型发光二极管的面光源以及制造边缘型发光二极管的方法。更具体地,本发明涉及其中提高了在横向方向上的光的提取效率的边缘型发光二极管,并且还涉及一种包括边缘型发光二极管的面光源及其制造方法。制造边缘型发光二极管。根据本发明实施例的边缘型发光二极管包括:基板,在基板的相应侧面上形成有第一光提取结构;在基板的一个表面上形成的第一反射层;半导体叠层结构,其形成在面对衬底的一个表面的衬底的相对表面上,并且包括n型半导体层,有源层和p型半导体层。第二反射层形成在半导体堆叠结构上。在这种情况下,从有源层发射的光可以通过衬底的侧面或半导体堆叠结构的侧面发射。; COPYRIGHT KIPO 2017

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