首页> 外国专利> Cutting method for Anodic oxide film structure and Unit Anodic oxide film structure using the same

Cutting method for Anodic oxide film structure and Unit Anodic oxide film structure using the same

机译:阳极氧化膜结构的切割方法和使用该方法的单元阳极氧化膜结构

摘要

The present invention relates to a cutting method for an anodic oxide film structure and a unit anodic oxide film structure using the same. An etching groove is formed by performing etching along a cutting line on one surface of the anodic oxide film. The diameter of the entrance of an anodizing pore located on the inner bottom surface of the etching groove is enlarged to form a large diameter pore. After that, a cutting process is performed along the etching groove so that the generation of cracks can be reduced and excellent yield can be obtained.
机译:阳极氧化膜结构的切割方法和使用该方法的单元阳极氧化膜结构技术领域本发明涉及一种阳极氧化膜结构的切割方法和使用该方法的单元阳极氧化膜结构。通过在阳极氧化膜的一个表面上沿着切割线进行蚀刻来形成蚀刻槽。位于蚀刻槽的内底表面上的阳极氧化孔的入口的直径被扩大以形成大直径的孔。之后,沿着蚀刻槽执行切割工艺,从而可以减少裂纹的产生并且可以获得优异的成品率。

著录项

  • 公开/公告号KR20170034797A

    专利类型

  • 公开/公告日2017-03-29

    原文格式PDF

  • 申请/专利权人 POINT ENGINEERING CO. LTD.;

    申请/专利号KR20170018186

  • 发明设计人 AHN BUM MO;PARK SEUNG HO;BYUN SUNG HYUN;

    申请日2017-02-09

  • 分类号H01L21/78;C25D11/02;C25D11/18;H01L21/473;H01L21/76;

  • 国家 KR

  • 入库时间 2022-08-21 13:27:48

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