首页>
外国专利>
METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY INCLUDING MICROFLUDIC
METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY INCLUDING MICROFLUDIC
展开▼
机译:场效应晶体管型生物传感器阵列的制造方法以及制造包括微流场的晶体管形式的场效应晶体管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a method for manufacturing a field effect transistor type bio sensor array, capable of preventing foreign substances which may be generated during a manufacturing process, from being attached to the surface of a two-dimensional nano-material channel layer. The method for manufacturing a field effect transistor type bio sensor array includes: a step of arranging the channel layer formed of a two-dimensional nano-material on a substrate; a step of arranging a sacrificial layer on the channel layer; a step of arranging a first photoresist on the sacrificial layer and forming a first pattern by exposing the first photoresist with light; a step of forming multiple nano-material structures corresponding to the first pattern on the substrate by using the first photoresist patterned as a mask and etching the sacrificial layer and the channel layer; a step of forming a second pattern by arranging a second photoresist on the multiple nano-material structures and exposing the second photoresist with the light; a step of forming an area in which a source electrode and a drain electrode are individually formed on the channel layer of the multiple nano-material channel layers by using the patterned second photoresist as the mask and etching the sacrificial layer of the multiple nano-material structures; a step of individually forming the source electrode and the drain electrode on the channel layer of the multiple nano-material structures; a step of arranging a protection layer individually protecting the substrate, the source electrode, and the drain electrode; and a step of exposing the channel layer between the source electrode and the drain electrode by using the protection layer as the mask.;COPYRIGHT KIPO 2017
展开▼