首页> 外国专利> METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY INCLUDING MICROFLUDIC

METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR TYPE BIO SENSOR ARRAY INCLUDING MICROFLUDIC

机译:场效应晶体管型生物传感器阵列的制造方法以及制造包括微流场的晶体管形式的场效应晶体管的方法

摘要

Disclosed is a method for manufacturing a field effect transistor type bio sensor array, capable of preventing foreign substances which may be generated during a manufacturing process, from being attached to the surface of a two-dimensional nano-material channel layer. The method for manufacturing a field effect transistor type bio sensor array includes: a step of arranging the channel layer formed of a two-dimensional nano-material on a substrate; a step of arranging a sacrificial layer on the channel layer; a step of arranging a first photoresist on the sacrificial layer and forming a first pattern by exposing the first photoresist with light; a step of forming multiple nano-material structures corresponding to the first pattern on the substrate by using the first photoresist patterned as a mask and etching the sacrificial layer and the channel layer; a step of forming a second pattern by arranging a second photoresist on the multiple nano-material structures and exposing the second photoresist with the light; a step of forming an area in which a source electrode and a drain electrode are individually formed on the channel layer of the multiple nano-material channel layers by using the patterned second photoresist as the mask and etching the sacrificial layer of the multiple nano-material structures; a step of individually forming the source electrode and the drain electrode on the channel layer of the multiple nano-material structures; a step of arranging a protection layer individually protecting the substrate, the source electrode, and the drain electrode; and a step of exposing the channel layer between the source electrode and the drain electrode by using the protection layer as the mask.;COPYRIGHT KIPO 2017
机译:本发明公开了一种场效应晶体管型生物传感器阵列的制造方法,该方法能够防止在制造过程中可能产生的异物附着在二维纳米材料通道层的表面上。用于制造场效应晶体管型生物传感器阵列的方法包括:在基板上布置由二维纳米材料形成的沟道层的步骤;以及在基板上布置由二维纳米材料形成的沟道层的步骤。在沟道层上布置牺牲层的步骤;在牺牲层上布置第一光致抗蚀剂并通过将第一光致抗蚀剂暴露于光来形成第一图案的步骤;通过使用构图为掩模的第一光刻胶并蚀刻牺牲层和沟道层,在基板上形成与第一图案对应的多种纳米材料结构的步骤;通过在多个纳米材料结构上布置第二光致抗蚀剂并用光曝光第二光致抗蚀剂来形成第二图案的步骤;通过使用图案化的第二光致抗蚀剂作为掩模并蚀刻所述多种纳米材料的牺牲层,在所述多种纳米材料通道层的沟道层上形成分别形成源电极和漏电极的区域的步骤结构;在多个纳米材料结构的沟道层上分别形成源电极和漏电极的步骤;设置分别保护基板,源电极和漏电极的保护层的步骤;以及通过使用保护层作为掩模来暴露源电极和漏电极之间的沟道层的步骤。; COPYRIGHT KIPO 2017

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