METHOD FOR ACQUIRING DOSAGE CORRECTION PARAMETER OF CHARGED-PARTICLE BEAM CHARGED-PARTICLE BEAM WRITING METHOD AND CHARGED-PARTICLE BEAM WRITING APPARATUS

摘要

An embodiment of the present invention relates to a method for obtaining a parameter for correcting the irradiation amount of a charged particle beam. The method includes the processes of: painting multiple evaluation patterns on a substrate coated with a resist unit by using a charged particle beam; painting peripheral patterns corresponding to individual painting conditions by using multiple shots of the charged particle beam while varying the painting conditions for the individual evaluation patterns after a lapse of time sufficient for ignoring a rise in the temperature of the resist unit due to the painting of the evaluation patterns; measuring the width of the evaluation patterns painted with the peripheral patterns there-around for the individual painting conditions; calculating a rearward scattering dose amount reaching to the evaluation patterns from the individual shots for the individual painting conditions; calculating the temperature rising amount of the evaluation patterns due to the heat transmitted from shots transmitted before the individual shots for the individual painting conditions; and using the width of the evaluation patterns for the individual painting conditions, the temperature rising amount of the evaluation patterns at the shots for the individual painting conditions, and the rearward scattering dose amount from the individual shots to the evaluation patterns for the individual painting condition to calculate a relation parameter defining the relation between the rearward scattering dose amount reaching the evaluation patterns, the temperature rising amount of the evaluation patterns, and a change in the width of the evaluation patterns.