首页> 外国专利> METHOD TO PRODUCE MULTI-LAYERED HEXAGONAL BORON NITRIDE NANOCOMPOSITE USING SAPPHIRE SUBSTRATE

METHOD TO PRODUCE MULTI-LAYERED HEXAGONAL BORON NITRIDE NANOCOMPOSITE USING SAPPHIRE SUBSTRATE

机译:蓝宝石基质制备多层六角氮化硼纳米复合材料的方法

摘要

Provided by the present invention is a multi-layered hexagonal boron nitride nanocomposite by using a sapphire substrate. The method of the present invention comprises: a first step of forming borazine by heating ammonia borazine; and a second step of arranging a sapphire substrate on a reactor and forming a multi-layered hexagonal boron nitride on the sapphire substrate by inputting the borazine and hydrogen and thermally treating the inputted borazine and hydrogen. Thus, the multi-layered hexagonal boron nitride can be produced in a large area to have a single crystal orientation of high quality through a low pressure chemical vapor deposition unlike a case of forming h-BN using an existing metal catalyst. A multi-layered h-BN layer directly formed on a sapphire substrate can be used as a substrate of an electric device and a graphene field effect transistor (FET) by having a smooth surface and high electron mobility.;COPYRIGHT KIPO 2017
机译:本发明提供了一种使用蓝宝石衬底的多层六角形氮化硼纳米复合材料。本发明的方法包括:通过加热氨硼嗪形成硼嗪的第一步;第二步是将蓝宝石衬底布置在反应器上,并通过输入硼嗪和氢并热处理输入的硼嗪和氢,在蓝宝石衬底上形成多层六方氮化硼。因此,与使用现有的金属催化剂形成h-BN的情况不同,可以通过低压化学气相沉积以大面积生产多层六方氮化硼,从而具有高质量的单晶取向。直接形成在蓝宝石衬底上的多层h-BN层具有光滑的表面和高的电子迁移率,可用作电子设备和石墨烯场效应晶体管(FET)的衬底。; COPYRIGHT KIPO 2017

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号