LOW IMPURITY DETECTION METHOD FOR CHARACTERIZING METALS WITHIN A SURFACE AND SUB-SURFACE OF POLYCRYSTALLINE SILICON

摘要

The present invention relates to a method for quantifying metal impurities on a silicon product, and specifically, to a method for quantifying metal impurities on a silicon product which comprises: obtaining the silicon product sample; etching or chemically treating the surface of the silicon product to remove a predetermined amount of silicon product mass; inspecting and measuring the etched fraction for the presence of metal impurities by using an inspection technique selected from ICP-MS, ICP-OES, IC inspection measurement techniques, or from a combination including at least one technique among the techniques mentioned above, wherein the metal impurities are selected from sodium, magnesium, nickel, copper, zinc, molybdenum, tungsten, aluminum, potassium, calcium, titanium, chromium, manganese, iron, cobalt or from a combination including at least one metal among the metals mentioned above.