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Micro Semiconducting Gas Sensors for Low power operation and its fabrication method

机译:用于低功率操作的微半导体气体传感器及其制造方法

摘要

The present invention relates to a micro-semiconductor type gas sensor for low-power driving and a method of manufacturing the same, and more particularly, to a micro-semiconductor type gas sensor and a method of manufacturing the same. The substrate includes an air gap, a peripheral portion provided on the substrate and including electrode pads, ) Connected to the electrode pads, a sensing film-containing sensor portion on the sensing electrodes, and a conductive-line-containing connection portion that connects the peripheral portion and the sensor portion and electrically connects the electrode pads and the sensing electrodes, Wherein the air gap penetrates through the substrate and a thermal isolation region is provided extending from the air gap between the peripheral portion and the sensor portion, and a method of manufacturing the same.;
机译:微半导体型气体传感器及其制造方法技术领域本发明涉及一种用于低功率驱动的微半导体型气体传感器及其制造方法,更具体地,涉及一种微半导体型气体传感器及其制造方法。基板包括气隙,设置在基板上并包括电极焊盘的外围部分,与电极焊盘连接的),在感测电极上的包含感测膜的传感器部分,以及将导电层连接到导电层的连接部分。外围部分和传感器部分,并且电连接电极焊盘和感测电极,其中,气隙穿透基板,并且设置从外围部分和传感器部分之间的气隙延伸的热隔离区域,以及方法制造相同的。

著录项

  • 公开/公告号KR101772575B1

    专利类型

  • 公开/公告日2017-08-30

    原文格式PDF

  • 申请/专利权人 한국전자통신연구원;

    申请/专利号KR20130085557

  • 发明设计人 이대식;김승환;정문연;

    申请日2013-07-19

  • 分类号G01N27/12;

  • 国家 KR

  • 入库时间 2022-08-21 13:24:56

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