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Boron doped silicon oxide based anode active material and Method of preparing for the same and Lithium secondary battery using the same

机译:硼掺杂的氧化硅基负极活性材料及其制备方法和使用该负极的锂二次电池

摘要

The present invention relates to a boron-doped silicon oxide based anode active material, a method of manufacturing the same, and a lithium secondary battery using the same. More particularly, the present invention relates to a method of manufacturing a lithium- One); And a step (2) of disposing the dummy substrate and the silicon oxide-based mixture prepared in step 1 apart from each other and performing a heat treatment (step 2). When the boron-doped silicon oxide-based material prepared by the present invention is used as a negative electrode active material for a secondary battery, the cost of the negative electrode active material is increased compared to the existing technology, and the boron compound, which is an impurity, Only the element is doped. Further, by allowing the boron element to diffuse into the silicon oxide-based material, the electrochemical characteristics can be improved due to an increase in diffusion rate of lithium ions and partial silicon crystal formation. Further, the capacity and cycle characteristics of the battery are improved, which can be utilized as a secondary battery for electric vehicles and large energy storage devices in the future.
机译:硼掺杂的氧化硅基负极活性材料,其制造方法以及使用其的锂二次电池技术领域本发明涉及硼掺杂的氧化硅基负极活性材料,其制造方法以及使用其的锂二次电池。更具体地,本发明涉及一种锂的制造方法。然后,将虚设基板和在步骤1中制备的基于氧化硅的混合物彼此分开放置并进行热处理的步骤(2)(步骤2)。当将通过本发明制备的掺杂硼的氧化硅基材料用作二次电池的负极活性材料时,与现有技术相比,负极活性材料的成本增加,并且硼化合物与是杂质,仅元素被掺杂。此外,通过使硼元素扩散到基于氧化硅的材料中,由于锂离子的扩散速率的增加和部分硅晶体的形成,可以改善电化学特性。此外,电池的容量和循环特性得到改善,其可以在将来用作电动车辆和大型储能装置的二次电池。

著录项

  • 公开/公告号KR101790555B1

    专利类型

  • 公开/公告日2017-10-27

    原文格式PDF

  • 申请/专利权人 재단법인대구경북과학기술원;

    申请/专利号KR20150152375

  • 发明设计人 백성호;김재현;우지훈;

    申请日2015-10-30

  • 分类号H01M4/38;C01B35/10;C01B35/12;H01M10/052;H01M4/134;

  • 国家 KR

  • 入库时间 2022-08-21 13:24:39

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