Method for producing nanoprofiled ultrafine Al2O3 film on porous silicon surface

摘要

FIELD: chemistry.SUBSTANCE: film AlOis applied by ion-plasma sputtering to the layer of porous silicon with a pore size of less than 3 nm produced by electrochemical etching of the initial single crystal silicon plate at the operating chamber pressure in the range of 3-5⋅10mm Hg and the target potential of 400-600 V.EFFECT: providing an opportunity to create an efficient method for manufacturing a nano-profiled ultra-thin aluminium dioxide film on the surface of porous silicon.2 cl, 2 dwg