The vertical potential in the end of the short periheriegebiet of a iii - nitride stack to prevent a lateral leak

摘要

A semiconductor - which contains a substrate, and a semiconductor body is supported by the substrate and has a periphery, which is free of active components and at a marginal surface of the semiconductors - the ends. The semiconductor body contains a first iii - nitride - semiconductor layer and a plurality of second iii - nitride - semiconductor layers under the first iii - nitride - semiconductor layer. A uninsulated connecting structure extends vertically in the periphery of the semiconductor body, and represents a vertical leakage for at least some of the second iii - nitride - semiconductor layers to the substrate, to a metallization layer is arranged above the substrate or to both ready. It is also a corresponding method for producing of the semiconductors - the described.