SEMICONDUCTOR ELECTROLUMINESCENT DEVICE HAVING A STRUCTURED PHOTOLUMINESCENT LAYER

摘要

The optoelectronic light emitting device (1) comprises: - at least one light-emitting diode (10) having a transmitting surface (11); - a photoluminescent layer (30), which at least partially covers the emission surface, comprising at least a first phosphor (Lc) adapted to absorb incident light radiation emitted by the light emitting diode and to emit in response light radiation to a first wavelength, and having at least one cavity (33i) formed from a face (32) of the photoluminescent layer opposite to the emission surface. At least one second phosphor (Li) is disposed in said cavity (33i), the second phosphor being adapted to absorb incident light radiation and to emit light radiation at a second wavelength different from the first length of light. wave.