首页> 外国专利> METHODS AND APPARATUS FOR REUSING LOOKUP TABLE RANDOM-ACCESS MEMORY (LUTRAM) ELEMENTS AS CONFIGURATION RANDOM-ACCESS MEMORY (CRAM) ELEMENTS

METHODS AND APPARATUS FOR REUSING LOOKUP TABLE RANDOM-ACCESS MEMORY (LUTRAM) ELEMENTS AS CONFIGURATION RANDOM-ACCESS MEMORY (CRAM) ELEMENTS

机译:重用查找表随机访问存储器(LUTRAM)元素作为配置随机访问存储器(CRAM)元素的方法和装置

摘要

A programmable integrated circuit may include configuration random-access memory (CRAM) cells and lookup table random-access memory (LUTRAM) cells. The programmable integrated circuit may include a CRAM column and at least two LUTRAM columns, a first portion of which is operable as LUTRAM cells and a second portion of which is reused as CRAM cells. Each of the memory cells have a configuration write port and a read port. The configuration write ports of the first portion may be gated, whereas the configuration write ports of the second portion lack gating logic. The read port of the memory cells in the LUTRAM columns may be masked only when the first portion of cells are operated in RAM mode and are currently being accessed.
机译:可编程集成电路可以包括配置随机存取存储器(CRAM)单元和查找表随机存取存储器(LUTRAM)单元。可编程集成电路可包括CRAM列和至少两个LUTRAM列,其第一部分可作为LUTRAM单元操作,并且其第二部分可再用作CRAM单元。每个存储单元都有一个配置写端口和一个读端口。第一部分的配置写端口可以被门控,而第二部分的配置写端口缺少门逻辑。仅当单元的第一部分在RAM模式下运行并且当前正在访问时,才可以屏蔽LUTRAM列中存储单元的读取端口。

著录项

  • 公开/公告号EP3355307A1

    专利类型

  • 公开/公告日2018-08-01

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号EP20180150319

  • 申请日2018-01-04

  • 分类号G11C8/10;G11C7/12;G11C8/16;G11C11/418;H03K19/177;G11C11/412;

  • 国家 EP

  • 入库时间 2022-08-21 13:15:42

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