首页> 外国专利> MAGNETIC FIELD MODULATION MECHANISM, MAGNETIC FIELD MODULATION ELEMENT, ANALOG MEMORY ELEMENT AND HIGH-FREQUENCY FILTER

MAGNETIC FIELD MODULATION MECHANISM, MAGNETIC FIELD MODULATION ELEMENT, ANALOG MEMORY ELEMENT AND HIGH-FREQUENCY FILTER

机译:磁场调制机制,磁场调制元件,模拟存储元件和高频滤波器

摘要

PROBLEM TO BE SOLVED: To provide a magnetic field modulation mechanism available in a memory capable of a novel type of multi-value recording or analog recording.;SOLUTION: A magnetic field modulation mechanism 10 has a domain wall DW and is constituted of a first region 1a, a second region 1b and a third region 1c positioned between these regions and includes: a variable magnetic field supply part 1 capable of varying a magnetic field supplied by domain wall driving; a first domain wall supply layer 2 in contact with the first region 1a and having a first direction of magnetization; a second domain wall supply layer 3 in contact with the second region 1b and having a second direction of magnetization in the opposite direction to the first direction of magnetization; and a current source 4 electrically connected with the first domain wall supply layer 2 and the second domain wall supply layer 3 and running an electric current through the variable magnetic field supply part 1, and can drive a domain wall in the variable magnetic field supply part 1 by an electric current supplied from the current source 4.;SELECTED DRAWING: Figure 3;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:提供一种在存储器中可用的磁场调制机制,该存储器能够进行新型的多值记录或模拟记录。解决方案:磁场调制机制10具有畴壁DW并由第一区域1a,位于这些区域之间的第二区域1b和第三区域1c包括:可变磁场供给部1,其能够改变通过畴壁驱动而供给的磁场。与第一区域1a接触并具有第一磁化方向的第一畴壁供应层2;第二畴壁供给层3,其与第二区域1b接触,并具有与第一磁化方向相反的第二磁化方向。电流源4与第一畴壁供给层2和第二畴壁供给层3电连接,并且使电流流过可变磁场供给部1,能够驱动可变磁场供给部中的畴壁。 1由电流源提供的电流4 .;选图:图3;版权:(C)2018,JPO&INPIT

著录项

  • 公开/公告号JP2018067593A

    专利类型

  • 公开/公告日2018-04-26

    原文格式PDF

  • 申请/专利权人 TDK CORP;

    申请/专利号JP20160204387

  • 发明设计人 SASAKI TOMOO;

    申请日2016-10-18

  • 分类号H01L43/08;G11B5/39;H01L29/82;H01L21/8246;H01L27/105;G11C11/15;

  • 国家 JP

  • 入库时间 2022-08-21 13:11:45

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