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MAGNETIC FIELD MODULATION MECHANISM, MAGNETIC FIELD MODULATION ELEMENT, ANALOG MEMORY ELEMENT AND HIGH-FREQUENCY FILTER
MAGNETIC FIELD MODULATION MECHANISM, MAGNETIC FIELD MODULATION ELEMENT, ANALOG MEMORY ELEMENT AND HIGH-FREQUENCY FILTER
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机译:磁场调制机制,磁场调制元件,模拟存储元件和高频滤波器
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摘要
PROBLEM TO BE SOLVED: To provide a magnetic field modulation mechanism available in a memory capable of a novel type of multi-value recording or analog recording.;SOLUTION: A magnetic field modulation mechanism 10 has a domain wall DW and is constituted of a first region 1a, a second region 1b and a third region 1c positioned between these regions and includes: a variable magnetic field supply part 1 capable of varying a magnetic field supplied by domain wall driving; a first domain wall supply layer 2 in contact with the first region 1a and having a first direction of magnetization; a second domain wall supply layer 3 in contact with the second region 1b and having a second direction of magnetization in the opposite direction to the first direction of magnetization; and a current source 4 electrically connected with the first domain wall supply layer 2 and the second domain wall supply layer 3 and running an electric current through the variable magnetic field supply part 1, and can drive a domain wall in the variable magnetic field supply part 1 by an electric current supplied from the current source 4.;SELECTED DRAWING: Figure 3;COPYRIGHT: (C)2018,JPO&INPIT
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