Systems and methods for semiconductor measurement and surface analysis using secondary ion mass spectrometry

摘要

Disclosed are systems and techniques for semiconductor measurements and surface analysis using secondary ion mass spectrometry (SIMS). In one example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is guided to the sample stage. A retractable lens is directed to the sample stage. The pulling lens is configured to provide a low pulling field of secondary ions emitted from the sample on the sample stage. A magnetic sector analyzer is coupled to the retractable lens along the optical path of the SIMS system. The magnetic sector analyzer includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).