Charged particle beam drawing apparatus, beam resolution measurement method of charged particle beam, and adjustment method of charged particle beam drawing apparatus

摘要

PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and beam resolution measuring method, that are capable of quickly and accurately measuring beam resolution without requiring to install, on a stage, a rotation mechanism for rotating a mark substrate.SOLUTION: A charged particle beam lithography apparatus 100 irradiates a sample on a stage 105 with a charged particle beam to draw a pattern. The charged particle beam lithography apparatus 100 comprises: a mark substrate 10 which is provided on the stage 105 and on which a plurality of mark patterns having different rotation angles are formed; and a detector 209 for detecting charged particles reflected from the mark substrate 10. Each of the plurality of mark patterns includes a linear part and another linear part orthogonal to the linear part. Beam resolution is calculated by calculating a waveform width of a scan waveform in scanning a linear part of each mark pattern by using the charged particle beam, and selecting a mark pattern having a minimum waveform width.SELECTED DRAWING: Figure 1