首页> 外国专利> SUPERCONDUCTING MAGNETIC FIELD GENERATION DEVICE, SUPERCONDUCTING MAGNETIC FIELD GENERATION METHOD AND NUCLEAR MAGNETIC RESONANCE DEVICE

SUPERCONDUCTING MAGNETIC FIELD GENERATION DEVICE, SUPERCONDUCTING MAGNETIC FIELD GENERATION METHOD AND NUCLEAR MAGNETIC RESONANCE DEVICE

机译:超导磁场产生装置,超导磁场产生方法和核磁共振装置

摘要

A superconducting magnetic field generating device includes: a superconductor including an outer superconductor formed with a high temperature superconducting material in a cylindrical shape and generating a trapped magnetic field, and an inner superconductor formed with a high temperature superconducting material in a cylindrical shape and coaxially disposed with the outer superconductor on the inner circumferential side; and a cooling device cooling the outer and inner superconductors to a temperature equal to or lower than the superconducting transition temperature, wherein the inner superconductor is formed so that a ratio (Jcθ1/Jcz1) of a critical current density (Jcθ1) of the inner superconductor in the circumferential direction to a critical current density (Jcz1) of the inner superconductor in the axial direction is closer to 1 than a ratio (Jcθ2/Jcz2) of the critical current density (Jcθ2) in the circumferential direction to a critical current density (Jcz2) of the outer superconductor of the outer superconductor in the axial direction.
机译:一种超导磁场产生装置,包括:超导体,其包括由圆柱形的高温超导材料形成并产生俘获磁场的外部超导体;以及由圆柱形的高温超导材料形成并同轴设置的内部超导体。外超导体在内圆周侧。冷却装置,其将内外超导体和内超导体冷却至等于或低于超导转变温度的温度,其中内超导体形成为使得内超导体的临界电流密度(Jcθ1)的比(Jcθ1/ Jcz1)在圆周方向上,内部超导体的轴向上的临界电流密度(Jcz1)比在圆周方向上的临界电流密度(Jcθ2/ Jcz2)在圆周方向上与临界电流密度(Jcθ2/ Jcz2)之比(Jcθ2/ Jcz2)更接近1。外部超导体的外部超导体在轴向上的Jcz2)。

著录项

  • 公开/公告号JP6402501B2

    专利类型

  • 公开/公告日2018-10-10

    原文格式PDF

  • 申请/专利权人 アイシン精機株式会社;

    申请/专利号JP20140127301

  • 发明设计人 伊藤 佳孝;柳 陽介;吉川 雅章;

    申请日2014-06-20

  • 分类号H01F6/06;H01F6/04;H01F6;H01F7/20;G01N24;

  • 国家 JP

  • 入库时间 2022-08-21 13:08:45

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