Vertical cavity surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device and information processing device

摘要

PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of achieving higher output.SOLUTION: The surface-emitting semiconductor laser has an n-type lower DBR 102, an active region 104, and a p-type upper DBR 106 on an n-type GaAs substrate 100. A current constriction layer 108 is formed inside the upper DBR 106, and a first DBR 106A and a second DBR 106B are separated with the current constriction layer 108 as a boundary. The refractive index difference between a high refractive index layer and a low refractive index layer constituting the first DBR 106A on the active region side is larger than the refractive index difference between a high refractive index layer and a low refractive index layer constituting the second DBR 106B.