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Perpendicular for perpendicular magnetization film, perpendicular magnetization film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using them

机译:垂直用于垂直磁化膜,垂直磁化膜结构,垂直MTJ元件以及使用它们的垂直磁记录介质

摘要

Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the 001 direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
机译:公开了一种垂直磁化膜结构,其使用高度耐热的下层膜,其上可以高质量地生长立方或四方垂直磁化膜,该结构包括具有(001)的立方单晶衬底中的任何一个衬底(5)。平面,或具有立方取向膜且生长到具有(001)平面的基板;由具有hcp结构的金属薄膜(例如Ru或Re)在基板(5)上形成的底层(6),其中金属薄膜的[0001]方向形成的角度为42相对于基板(5)的<001>方向或(001)方向的角度为54至54°;垂直磁化层(7),其位于金属底层(6)上,并且由立方材料形成,该立方材料选自Co基Heusler合金,具有bcc结构的钴铁(CoFe)合金和例如,作为构成材料,并生长为具有(001)平面。

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