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Light-emitting diode structure including separation unit between light-emitting diode units and display apparatus including the same

机译:包括在发光二极管单元之间的分离单元的发光二极管结构以及包括该发光二极管结构的显示装置

摘要

A light-emitting diode structure includes light-emitting diode units, and a separation unit, where one of the light-emitting diode units includes a stacked structure including an n-type semiconductor layer, a p-type semiconductor layer, and a photo-active layer arranged between the n-type semiconductor layer and the p-type semiconductor layer, a first electrode, which faces a surface of the stacked structure and is electrically connected to one of the n-type semiconductor layer and the p-type semiconductor layer, and a second electrode, which faces the surface of the stacked structure opposite to the surface faced by the first electrode and is electrically connected to one of the n-type semiconductor layer and the p-type semiconductor layer, and the separation unit is arranged between at least two adjacent light-emitting diode units among the light-emitting diode units and separates the two light-emitting diode units from each other.
机译:发光二极管结构包括发光二极管单元和分离单元,其中发光二极管单元之一包括堆叠结构,该堆叠结构包括n型半导体层,p型半导体层和光敏半导体层。布置在n型半导体层和p型半导体层之间的有源层,第一电极,第一电极面对堆叠结构的表面并且电连接到n型半导体层和p型半导体层中的一个以及第二电极,其与堆叠结构的与第一电极面对的表面相对的表面相对并且电连接到n型半导体层和p型半导体层中的一个,并且布置分离单元所述发光二极管单元之间的至少两个相邻的发光二极管单元之间的间隔,并且将所述两个发光二极管单元彼此分开。

著录项

  • 公开/公告号US10084009B2

    专利类型

  • 公开/公告日2018-09-25

    原文格式PDF

  • 申请/专利权人 SAMSUNG DISPLAY CO. LTD.;

    申请/专利号US201615150682

  • 发明设计人 MINSOO KIM;

    申请日2016-05-10

  • 分类号H01L27/32;H01L27/15;H01L33/44;H01L33/06;H01L33/32;H01L33/58;H01L33/60;H01L25/075;H01L33/20;

  • 国家 US

  • 入库时间 2022-08-21 13:05:34

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