首页> 外国专利> High unity gain bandwidth voltage regulation for integrated circuits

High unity gain bandwidth voltage regulation for integrated circuits

机译:集成电路的高单位增益带宽电压调节

摘要

An integrated circuit voltage regulator includes a transconductor first stage; and a negative impedance cancellation stage, where the negative impedance cancellation stage comprises cross-coupled transistors at outputs of said transconductor first stage, and resistors in the transconductor first stage and the negative impedance cancellation stage introduce zeros in a transfer function, compensating for parasitic poles. The resistors may compensate for parasitic capacitance inherent in transistors. Load transistors may be coupled to outputs of the transconductance first stage. The voltage regulator may be implemented in a Complementary Metal-Oxide-Semiconductor (CMOS) structure, which may be a system-on-chip integrated circuit. The voltage regulator may provide immunity to power supply noise. The negative impedance cancellation stage may include differential input transistors coupled to the cross-coupled transistors.
机译:一种集成电路稳压器,其包括跨导的第一级;第一级和第二级。负阻抗消除级,其中负阻抗消除级包括在所述跨导体第一级的输出处的交叉耦合的晶体管,并且在跨导体第一级和负阻抗消除级中的电阻器在传递函数中引入零,以补偿寄生极。 。电阻器可以补偿晶体管固有的寄生电容。负载晶体管可以耦合到跨导第一级的输出。可以以互补金属氧化物半导体(CMOS)结构来实现电压调节器,该互补金属氧化物半导体(CMOS)结构可以是片上系统集成电路。调压器可提供抗电源噪声的能力。负阻抗消除级可以包括耦合到交叉耦合的晶体管的差分输入晶体管。

著录项

  • 公开/公告号US10042373B2

    专利类型

  • 公开/公告日2018-08-07

    原文格式PDF

  • 申请/专利权人 ENTROPIC COMMUNICATIONS LLC;

    申请/专利号US201715449485

  • 发明设计人 RAED MOUGHABGHAB;

    申请日2017-03-03

  • 分类号G05F1/63;G05F1/575;G05F1/46;G05F3/24;

  • 国家 US

  • 入库时间 2022-08-21 13:03:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号