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WIDEBAND SINGLE-ENDED IM3 DISTORTION NULLING

机译:宽带单端IM3失真为零

摘要

System-on-chip (SOC) products using high frequency, wideband, highly linear, CMOS and BiCMOS processes will be the next evolution of wireless and wireline communications integrated circuits. Aspects described herein can provide enhanced overall performance over existing prior art single-ended, wideband RF amplifier topologies. A single-ended third order intermodulation distortion nulling circuit can extend the dynamic range for wideband amplifiers up to an order-of-magnitude, without a DC power or noise figure (NF) penalty. The application of distortion nulling can be extended to all the building blocks used in CMOS/BiCMOS RF transceivers to improve performance. The application of this concept to all of the building blocks in an RF transceiver will allow the dynamic range of the transceiver to be increased without suffering a DC power dissipation increase or a significant noise increase.
机译:使用高频,宽带,高度线性,CMOS和BiCMOS工艺的片上系统(SOC)产品将是无线和有线通信集成电路的下一个发展。与现有的现有技术的单端宽带RF放大器拓扑结构相比,本文所述的方面可以提供增强的整体性能。单端三阶互调失真零陷电路可以将宽带放大器的动态范围扩展到一个数量级,而不会产生直流功率或噪声系数(NF)损失。失真归零的应用可以扩展到CMOS / BiCMOS RF收发器中使用的所有构造块,以提高性能。将该概念应用于RF收发器中的所有构造块将允许增加收发器的动态范围,而不会导致DC功耗增加或噪声显着增加。

著录项

  • 公开/公告号US2018026585A1

    专利类型

  • 公开/公告日2018-01-25

    原文格式PDF

  • 申请/专利权人 WAIS M. ALI;LLOYD F. LINDER;

    申请/专利号US201715724186

  • 发明设计人 WAIS M. ALI;LLOYD F. LINDER;

    申请日2017-10-03

  • 分类号H03F1/32;H03F1/26;H03F3/195;

  • 国家 US

  • 入库时间 2022-08-21 13:01:15

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