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FORMING TS CUT FOR ZERO OR NEGATIVE TS EXTENSION AND RESULTING DEVICE
FORMING TS CUT FOR ZERO OR NEGATIVE TS EXTENSION AND RESULTING DEVICE
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机译:为零或负TS扩展和结果设备形成TS剪切
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摘要
A method of forming a logic or memory cell with less than or equal to 0 nm of TS extending past the active fins and the resulting device are provided. Embodiments include forming gates across pairs of fins on a substrate; forming pairs of RSD between the gates on the fins; forming a planar SAC cap on each of the gates; forming a metal layer over the substrate coplanar with the SACs; forming a TS structure in the metal layer over the fins, the TS structure formed over the pairs of RSD, each upper portion having a width equal to or less than an overall width of a pair of fins; forming spacers on opposite sides of the upper portions; removing the metal layer between adjacent spacers; forming an ILD over the substrate; and forming a CA on each upper portion and a CB on a gate through the ILD.
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