ATOM AND ION SOURCES AND SINKS, AND METHODS OF FABRICATING THE SAME

摘要

A bi-directional device for generating or absorbing atoms or ions. In some embodiments, the device comprises a solid-phase ion-conducting material, a first electrode positioned on a first surface of the solid-phase ion-conducting material, and a second electrode positioned on a second surface of the solid-phase ion-conducting material. The first electrode includes a plurality of triple phase boundaries, each located at an interface between the solid-phase ion-conducting material and the first electrode. A density of the triple phase boundaries is in the range of about 10⁴ m/m² to about 2×10⁷ m/m² on the first surface of the ion-conducting material. A method of operating the bi-directional device and a method of fabricating a bi-directional device are also provided.