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DEEP EPI ENABLED BY BACKSIDE REVEAL FOR STRESS ENHANCEMENT amp; CONTACT
DEEP EPI ENABLED BY BACKSIDE REVEAL FOR STRESS ENHANCEMENT amp; CONTACT
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机译:通过背面显示实现深度EPI,以增强应力和接触
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摘要
Embodiments of the invention include a non-planar transistor with a strained channel and methods of forming such a transistor. In an embodiment, the non-planar transistor may include a semiconductor substrate. According to an embodiment, a first source/drain (S/D) region and a second S/D region may be formed over the semiconductor substrate and separated from each other by a channel region. A gate stack may be formed over the channel region. In order to increase the amount of strain that may be induced in the channel region, embodiments may include forming a strain enhancement opening in the semiconductor substrate that removes at least a portion of the semiconductor substrate from below the channel region.
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