Methods and Systems for Monitoring Plasma Processing Systems and Advanced Process and Tool Control

摘要

Method and systems for operating a plasma processing chamber are provided. One example method includes processing a substrate in the plasma processing chamber under vacuum. The processing of said substrate producing particulate residues that adhere to surfaces within an internal region of the plasma processing chamber. The method includes characterizing performance of the processing of the substrate and inspecting an internal region of the plasma processing chamber after processing said substrate without breaking said vacuum. The inspecting is configured to identify characteristics of said particulate residues on one or more surfaces of the internal region of the plasma processing chamber. The inspecting includes capturing optical data of said one or more surfaces. The method further includes generating a tool model to correlate the characterized performance of the processing of the substrate to the characterized particulate residues. In one configuration, the tool model is optimized by repeating the inspections a plurality of times. The tool model is then usable for later inspecting internal surfaces of the chamber and providing a closed loop control to adjust at least one parameter of a recipe, based on anticipated performance of the recipe as identified from the tool model.