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Deep trench isolation structure and method for improved product yield
Deep trench isolation structure and method for improved product yield
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机译:深沟槽隔离结构和提高产品良率的方法
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摘要
A semiconductor structure having a deep trench isolation structure for improved product yield is disclosed. The semiconductor structure includes a deep trench having a filler material therein. The deep trench is adjacent to field oxide regions in a semiconductor substrate. A high density plasma (HDP) oxide layer, substantially free of thermal oxide, is situated over the filler material in the deep trench. The HDP oxide layer has a substantially co-planar top surface with at least one of the field oxide regions. According to the present disclosure, formation of nodules in the deep trench is prevented.
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