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Porous SiOx materials for improvement in SiOx switching device performances
Porous SiOx materials for improvement in SiOx switching device performances
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机译:多孔SiO x Sub>材料可改善SiO x Sub>开关器件的性能
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摘要
A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. SiOx) positioned between the electrodes. The memory material layer may provide a nanoporous structure. In some embodiments, the nanoporous structure may be formed electrochemically, such as from anodic etching. Electroformation of a filament through the memory material layer may occur internally through the layer rather than at an edge at extremely low electro-forming voltages. The porous memory device may also provide multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption.
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机译:诸如存储器或开关之类的多孔存储装置可以为顶部和底部电极提供位于电极之间的存储材料层(例如,SiO x Sub>)。存储器材料层可以提供纳米孔结构。在一些实施例中,纳米孔结构可以电化学地形成,例如由阳极蚀刻形成。穿过存储材料层的细丝的电形成可以在整个层内部发生,而不是在极低的电形成电压下在边缘发生。多孔存储器件还可以提供多位存储,高开关比,高温寿命长,出色的循环寿命,快速切换以及更低的功耗。
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