首页> 外国专利> Advanced process control methods for process-aware dimension targeting

Advanced process control methods for process-aware dimension targeting

机译:先进的过程控制方法,用于过程感知的维度定位

摘要

Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.
机译:公开了用于特定过程的高级过程控制(APC)的方法。在晶片上执行特定处理(例如,光刻或蚀刻处理)以创建特征图案。在目标特征上测量参数,并将该参数的值用于APC。但是,不是直接基于实际参数值执行APC,而是基于调整后的参数值执行APC。具体地,将偏移量(先前基于所有特征上参数值的分布的平均值确定的偏移量)应用于实际参数值以获取调整后的参数值,该参数值更好地表示了图案中的大多数特征。每次使用特定工艺在同一晶片的另一个区域或不同晶片上生成相同的图形时,执行此APC方法都会使图形之间的尺寸变化最小化。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号