首页> 外国专利> Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells

Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells

机译:包含第一和第二DOE的半导体晶片的制造和使用的工艺,该第一DOE和第二DOE是兼容标准单元的,启用NCEM的填充单元,第一DOE包括蛇形开口的填充单元,第二DOE包括针脚开口的填充单元

摘要

A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOEs), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The first DOE contains fill cells configured to enable non-contact (NC) detection of snake opens, and the second DOE contains fill cells configured to enable NC detection of stitch opens. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.
机译:用于制造和使用半导体晶片的工艺包括实例化第一和第二实验设计(DOE),每个实验都包括至少两个填充单元。填充单元包含配置为通过非接触式电气测量(“ NCEM”)获得在线数据的结构。第一个DOE包含填充单元,其配置为启用蛇形开口的非接触(NC)检测,第二个DOE包含填充单元,其配置为启用针迹打开的NC检测。该过程可以进一步包括从第一和/或第二DOE获得NC测量值,并且至少部分地使用这种测量值,以选择性地对晶片和/或其他晶片执行附加的处理,计量或检查步骤。 s)当前正在制造。

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