COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, COPPER ALLOY THIN PLATE FOR ELECTRONIC/ELECTRIC DEVICE, METHOD FOR MANUFACTURING COPPER ALLOY FOR ELECTRONIC/ELECTRIC DEVICE, AND CONDUCTIVE PART AND TERMINAL FOR ELECTRONIC/ELECTRIC DEVICE.

摘要

Provided is a copper alloy comprising, by mass%, Zn at greater than 2.0% and 36.5% or less, Sn at 0.1% to 0.9%, Ni at 0.05% or more and less than 1.0%, Fe at 0.001% or more and less than 0.10%, P at 0.005% to 0.10%, and the remainder including Cu and inevitable impurities, wherein in atomic ratio, 0.002=Fe/Ni1.5, 3(Ni+Fe)/P15, and 0.3Sn/(Ni+Fe)5 are satisfied as the content ratio of the elements, the average particle size of a-phase crystal particles including Cu, Zn and Sn is 0.1 to 50 µm, and a deposit comprising Fe and/or Ni and P is included.