Construction of the rear cover semiconductor laser mirror, in particular with the emission edge, and a method for producing coatings of the rear semiconductor laser mirror, in particular with the emission edge

摘要

the invention is applicable to natural security breakthroughs heterostruktur semiconductor material, forming a mirror laser, and then the expected ratio of optical power emitted from the conformation of both mirrors, front and rear.the cover rear mirror laser pu00f3lprzewodnikowego is characterized by the fact that from surface mirror semiconductor provides six layers in sequence order: the first layer adhezyjna, first an insulating layer, the second layer adhezyjna, metallic layer, t rzecia layer and second insulating layer adhezyjna.way to produce this cover is,the prior semiconductor surface passivation is deposited on the mirror in the process of vacuum layers of cover wysokoodbiciowego method cieniowu0105 using protruding above plane coating mirror przeku0142adek with material having a spread alnou015bci heat close to the coefficient of thermal expansion material laseruju0105cego,the first stage is sequentially first layer adhezyjna, first insulating layer and the second layer adhezyjna, pozycjonuju0105c handle lines down laser so that the beam are perpendicular to the surface of materials osadzanych coated mirror and second eta pie, after prior holder of slope with rulers of angle equal to 0 - 0 degrees from normal to surface of the mirror.a metallic layer is deposited sequentially, a third layer of adhezyjna and other insulating layer.