СПОСІБ ПАСИВАЦІЇ ПОВЕРХНІ ПОРУВАТОГО ФОСФІДУ ІНДІЮ

摘要

A useful model relates to the methods of processing the surface of porous phosphide of indium n-type, namely, the passivation of sulfur, resulting in the crystal surface becomes resistant to the appearance of oxides. Ideally, the surface or partition boundary is a barrier that clearly separates the internal areas of the device or sets its outer boundaries. The surface of most semiconductors A3B5 is characterized by a high density of surface states in the forbidden zone, which leads to the fixing of the Fermi level, whose position on the surface practically does not depend on the nature of the adsorbed atoms. This circumstance adversely affects the work of many micro and optoelectronic devices, preventing them from fully disclosing the high potentialities of these semiconductors. The basis of the useful model is the problem of studying the influence of chalcogenide passivation of sulfur surface on porous layers of phosphide indium on the stability of properties, that is, passivation of sulfur to the state of inertia in relation to oxygen.