首页> 外国专利> FE-CO ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME, AND SOFT MAGNETIC THIN FILM LAYER AND PERPENDICULAR MAGNETIC RECORDING MEDIUM USING SAME

FE-CO ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME, AND SOFT MAGNETIC THIN FILM LAYER AND PERPENDICULAR MAGNETIC RECORDING MEDIUM USING SAME

机译:Fe-Co合金溅射靶材及其制备方法,以及使用相同的软磁薄膜层和垂直磁记录介质

摘要

PROVIDED IS A FE-CO ALLOY SPUTTERING TARGET MATERIAL THAT DOES NOT CRACK DURING SPUTTERING. THIS FE-CO ALLOY SPUTTERING TARGET MATERIAL IS COMPOSED OF A FE-CO-M ALLOY REPRESENTED BY FORMULA (1): (Fex-Co100-x)100-yMy … (1) WHERE THE ATOMIC RATIOS ARE 0 ≤ X ≤ 100 AND 4 ≤ Y ≤ 28, AND THE ELEMENT M INCLUDES AT LEAST ONE ELEMENT SELECTED FROM NB, TA, MO, W, CR, AND V. THE SPUTTERING TARGET MATERIAL HAS A MICROSTRUCTURE INCLUDING A PHASE BASED ON FE AND CO AND AN INTERMETALLIC COMPOUND PHASE CONTAINING THE ELEMENT M AND AT LEAST ONE OF FE AND CO. THE AREA RATIO OF A EUTECTIC STRUCTURE IN THE OVERALL MICROSTRUCTURE IS 30% OR LESS. FIG. 2
机译:提供了一种FE-CO合金溅射靶材,在溅射过程中不会破裂。此FE-CO合金溅射靶材由以下公式表示的FE-CO-M合金组成:(1):(Fex-Co100-x)100-yMy…(1)原子比为0≤X≤100且4≤Y≤28,并且元素M至少包括从NB,TA,MO,W,CR和V中选择的一个元素。溅射靶材具有微观结构,包括基于FE和CO以及相间复合相的相包含元素M且至少为FE和CO。整个微观结构中共晶结构的面积比为30%或更少。图。 2

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号