首页> 外国专利> DOPED OR ALLOYED MATERIALS AND HOT ISOSTATIC PRESSING METHOD OF MAKING SAME

DOPED OR ALLOYED MATERIALS AND HOT ISOSTATIC PRESSING METHOD OF MAKING SAME

机译:掺杂或合金化材料和热静压相同的方法

摘要

A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly- crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.
机译:一种形成掺杂衬底的方法,该方法包括:将在至少一个表面上包括掺杂剂层的衬底加热到​​预定温度;以及将所述衬底加热到​​预定温度。在所述预定温度下在所述衬底的表面上施加预定程度的等静压外压一段足以引起掺杂剂热迁移到衬底中以提供掺杂衬底的时间;去除等静压并将掺杂的衬底冷却到大约室温。衬底是玻璃材料,单晶材料,多晶材料,陶瓷材料或半导体材料,并且衬底可以是光学透明的。掺杂剂包括一种或多种过渡金属,一种或多种稀土元素或两者的组合。掺杂剂层包括一个或多个不同化学物种的隔离层。可以同时或相继施加等静压和升高的温度。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号