SUBSTITUTION SITE MEASURING DEVICE AND SUBSTITUTION SITE MEASURING METHOD

摘要

This substitution site measuring device using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a sample. The substitution site measuring device measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a sample upon irradiation of the sample with an electron beam. The substitution site measuring device is provided with: an input unit to which a crystal structure of a sample, energy or wavelengths of X-rays to be detected, an inclination angle of the sample, and positional information about the sample and the X-ray detector are inputted; a diffraction X-ray incidence calculating means for calculating incidence of diffraction X-rays on the X-ray detector on the basis of parameters inputted to the input unit; a measurement condition setting means for setting a measurement condition according to the incidence of diffraction X-rays on the X-ray detector calculated by the diffraction X-ray incidence calculating means such that the diffraction X-rays are not incident on the X-ray detector; and an electron beam inclination/X-ray detection control unit that detects the X-rays in synchronization with the inclination of an electron beam.