首页> 外国专利> DAMAGE PREDICTION APPARATUS AND DAMAGE PREDICTION METHOD FOR POWER SEMICONDUCTOR SWITCHING ELEMENT, AC-DC CONVERTER, AND DC-DC CONVERTER

DAMAGE PREDICTION APPARATUS AND DAMAGE PREDICTION METHOD FOR POWER SEMICONDUCTOR SWITCHING ELEMENT, AC-DC CONVERTER, AND DC-DC CONVERTER

机译:功率半导体开关元件,AC-DC转换器和DC-DC转换器的损伤预测装置和损伤预测方法

摘要

According to the present invention, a damage determination apparatus for a power semiconductor switching element is provided with: a resistor that is connected to the gate of the power semiconductor switching element; a comparison unit that compares a reference voltage with a detected voltage in accordance with the voltage generated at both ends of the resistor, when a prescribed voltage is applied to the gate of the power semiconductor switching element; and a prediction unit that predicts that a prescribed damage has accumulated in the gate insulating layer of the power semiconductor switching element when the detected voltage exceeds the reference voltage.
机译:根据本发明,用于功率半导体开关元件的损坏确定装置包括:连接到功率半导体开关元件的栅极的电阻器;以及连接到功率半导体开关元件的栅极的电阻器。比较单元,当向功率半导体开关元件的栅极施加规定的电压时,根据在电阻两端产生的电压,将基准电压与检测电压进行比较。预测单元,当检测出的电压超过基准电压时,预测在功率半导体开关元件的栅极绝缘层中蓄积了规定的损伤。

著录项

  • 公开/公告号WO2018168328A1

    专利类型

  • 公开/公告日2018-09-20

    原文格式PDF

  • 申请/专利权人 NIDEC CORPORATION;

    申请/专利号WO2018JP05532

  • 发明设计人 IKEDAHIDETOSHI;TOGAWATAKASHI;

    申请日2018-02-16

  • 分类号G01R31/26;H02M3/155;H02M7/12;

  • 国家 WO

  • 入库时间 2022-08-21 12:42:40

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