ZENER DIODE HAVING A POLYSILICON LAYER FOR IMPROVED REVERSE SURGE CAPABILITY AND DECREASED LEAKAGE CURRENT

摘要

A semiconductor device, such as a zener diode, includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type forming a junction therebetween in contact with the first semiconductor material. A first oxide layer is disposed over a portion of the second semiconductor material to expose the remainder of the second semiconductor material. A polysilicon layer is disposed on a portion of the first oxide layer and the exposed portion of the second semiconductor material. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposite the surface of the first semiconductor material in contact with the second semiconductor material.