METHOD TO MEASURE PARASITIC INDUCTANCE OF POWER SEMICONDUCTOR POWER MODULE

摘要

The present invention relates to a method to measure parasitic inductance of a power semiconductor power module. The parasitic inductance measuring method of the power semiconductor power module uses a measurement module including: a terminal unit which includes a first terminal and a second terminal arranged to be respectively connected to a pair of external terminals of the power semiconductor power module; and an LCR meter to measure impedance between the pair of external terminals by being electrically connected with the terminal unit. The present invention includes: a step of respectively measuring a first impedance value and a second impedance value by changing frequency between the first terminal and the second terminal in a state of shorting and opening the first terminal and the second terminal by using the LCR meter and measuring a third impedance value by changing frequency between the first terminal and the second terminal after respectively connecting the pair of external terminals with the first terminal and the second terminal; a step of calculating a fourth impedance value based on the measured first, second and third impedance values; and a step of calculating a parasitic inductance of the power semiconductor power module based on the fourth impedance value according to frequency changes between the first terminal and the second terminal. By the above, the present invention has effects of: accurately measuring a parasitic inductance value of the power semiconductor power module used for a power conversion system; preventing failure of an internal power device of a power module or occurrence of electromagnetic interference; and efficiently adjusting the size of the diode and internal switch element of the power module.;COPYRIGHT KIPO 2018