METHOD FOR SELECTIVE ETCHING AND ANALYZING OF DOMAIN BOUNDARY OF TWO-DIMENSIONAL MATERIAL USING HYDROGEN AND ARGON GASES

摘要

The present invention relates to a method for selective etching of a domain boundary of a two-dimensional material using hydrogen and argon gases. More specifically, the present invention relates to a method which can easily check a domain size and a crystal direction of a two-dimensional material by using hydrogen/argon gases. According to an embodiment of the present invention, the method for selective etching and analyzing a domain boundary of a two-dimensional material using hydrogen and argon gases comprises the following steps of: preparing a substrate in a chamber; growing the two-dimensional material on the substrate; etching the grown two-dimensional material with at least one of the hydrogen and argon gases; and etching the domain boundary through the etching, and identifying a domain structure.;COPYRIGHT KIPO 2018