BORANE MEDIATED DEHYDROGENATION PROCESS FROM SILANE AND ALKYLSILANE SPECIES FOR SPACER AND HARDMASK APPLICATION

摘要

Implementations illustrated in the present application generally relate to manufacturing of an integrated circuit, and specifically to deposition of boron-doped amorphous silicon layers on a semiconductor substrate. In an implementation, provided is a forming method of a boron-doped amorphous silicon layer on a semiconductor substrate. The forming method comprises: a step of depositing a sacrifice dielectric layer of a predetermined thickness on a substrate; a step of forming patterned pitchers on the substrate by removing parts of the sacrifice dielectric layer to expose the top surface of the substrate; a step of isogonally depositing the boron-doped amorphous silicon layer of a predetermined thickness on the exposed top surface of the substrate and the patterned pitchers; and a step of selectively removing the boron-doped amorphous silicon layer from the top surface of the substrate and the top surface of the pattered pitchers by using an anisotropic etching process to provide the patterned pitchers charged in side wall spacers which are formed from the boron-doped amorphous silicon layer.