Graphene-based layer delivery system and method

摘要

A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer comprising III-V semiconductors, Si, Ge, III-N semiconductors, SiC, SiGe or II-VI semiconductors is fabricated on a graphene layer disposed on a substrate. The graphene layer or substrate may be lattice-matched to the device layer to reduce defects in the device layer. The fabricated device layer is then removed from the substrate, for example, through a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable, universal platform for growing the device layer and also serves as a release layer to enable rapid, precise and repeatable emission at the graphene surface.