首页> 外国专利> -- Planar liquid crystal-gated-field effect transistor with polymeric dipole control layer and ultrasensitive tactile sensor using the same

-- Planar liquid crystal-gated-field effect transistor with polymeric dipole control layer and ultrasensitive tactile sensor using the same

机译:-带有聚合物偶极控制层的平面液晶门控场效应晶体管和使用该晶体管的超灵敏触觉传感器

摘要

The present invention relates to a liquid crystal-gate-field effect transistor including a dipole control layer and a tactile sensor using the same. The liquid crystal-gate-field effect transistor includes a substrate, a gate electrode formed on the substrate, a source electrode spaced apart from the gate electrode, A drain electrode formed on the substrate so as to be spaced apart from the source electrode, a channel layer formed on the substrate so as to cover the source electrode and the drain electrode, and electrically connecting the source electrode and the drain electrode, A liquid crystal layer formed to connect the gate electrode and the channel layer to each other, and a dipole control layer interposed between the liquid crystal layer and the channel layer to minimize induction of charge generation in the channel layer by the liquid crystal layer. According to the present invention, by applying a polymer material having a low dielectric constant to a structure of a conventional liquid crystal-gate-field effect transistor, leakage of drain current through the channel layer at a '0' gate voltage state is remarkably reduced, It is possible to simultaneously provide a function of a tactile sensor with a significantly improved sensing sensitivity.
机译:液晶栅场效应晶体管技术领域本发明涉及一种包括偶极控制层和使用其的触觉传感器的液晶栅场效应晶体管。液晶栅场效应晶体管包括:衬底;形成在衬底上的栅电极;与栅电极间隔开的源电极;形成在衬底上以与源电极间隔开的漏电极;形成在基板上以覆盖源电极和漏电极并电连接源电极和漏电极的沟道层,形成为将栅电极和沟道层彼此连接的液晶层和偶极子控制层插入在液晶层和沟道层之间,以最小化液晶层在沟道层中感应电荷产生。根据本发明,通过将具有低介电常数的聚合物材料施加到常规的液晶栅场效应晶体管的结构,在“ 0”栅电压状态下通过沟道层的漏电流的泄漏被显着地减少。可以同时提供具有明显改善的感测灵敏度的触觉传感器的功能。

著录项

  • 公开/公告号KR101828330B1

    专利类型

  • 公开/公告日2018-02-13

    原文格式PDF

  • 申请/专利权人 경북대학교 산학협력단;

    申请/专利号KR20150116522

  • 发明设计人 김영규;김화정;서주역;

    申请日2015-08-19

  • 分类号G02F1/1368;F21V8;G01L1/12;G02F1/1343;G09G3/36;

  • 国家 KR

  • 入库时间 2022-08-21 12:38:27

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