23-:2'3'-'12-:45-' HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO 23-D:2'3'-D'BENZO12-B:45-B'DITHIOPHENE

摘要

The present invention relates to dithienobenzodithiophenes of formula (I) Wherein,R^OneTo R⁶Are each independently a) H, b) halogen, c)-CN, d)-NO₂e)-OH, f) C_One-20Alkyl group, g) C_2-20Alkenyl group, h) C_2-20An alkynyl group, i) C_One-20An alkoxy group, j) C_One-20Alkylthio group, k) C_One-20Haloalkyl group, l)-Y-C_3-10Cycloalkyl group, m)-Y-C_6-14An aryl group, n)-Y-3-12 membered cycloheteroalkyl group, or o)-Y-5-14 membered heteroaryl group, wherein the C_One-20Alkyl group, C_2-20Alkenyl group, C_2-20Alkynyl group, C_3-10Cycloalkyl group, C_6-14Each of the aryl group, the 3-12 membered cycloheteroalkyl group and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R⁷And R^OneAnd R³And R²And R⁴ RTI ID = 0.0 aliphatic /RTI cyclic moiety,Y is independently a divalent C_One-6Alkyl group, a divalent C_One-6A haloalkyl group, or a covalent bond;m is independently selected from 0, 1, or 2.The invention also relates to a method of manufacturing a semiconductor or a charge transport material, as a thin film transistor (TFT) or in a semiconductor component for an organic light emitting diode (OLED), in a photovoltaic component or in a sensor, as an electrode material in a battery, The invention relates to the use of dithienobenzodithiophenes according to any one of claims 1 to 4 in the field of electrophotography.