Oxide transistor using femto-second laser preannealing and fabricating method thereof

摘要

The present invention relates to an oxide transistor and a method of manufacturing the same, and a method of manufacturing an oxide transistor according to the present invention includes the steps of: fabricating a substrate including a bottom electrode used as a gate electrode; And performing a preannealing process on a surface of the thin film using a femtosecond laser. After the pre-annealing process is performed, an active layer is formed on the substrate, And forming a top electrode used as a source and a drain on the active layer. According to the present invention, there is an effect that the performance of the oxide transistor can be improved.