3 Multilayer structure to increase hall effect and three dimensional hall effect sensor using this

摘要

The present invention relates to a lamination structure of a hole plate (11A to 11D) for enhancing a Hall effect and a three-dimensional hall sensor using the same. The present invention relates to a semiconductor device comprising a metal layer (10, 110) composed of a plurality of layers and connected to each other through a via hole and applied current in a direction crossing the metal layers (10, 110) A direction changing layer 30, 130 formed of a plurality of layers stacked in the same direction, each layer including a pair of separated metal layers 31A to 31D connected to each other through a via hole; The first and second bridges 50A and 50B are electrically connected to any one of the first and second directional conversion layers 30 and 130 so that current flows in opposite directions to the metal layers 10 and 110 and the directional conversion layers 30 and 130, 50B. According to the present invention, since the effective section in which electrons can move along the direction in which the hole plates 11A to 11D are stacked is sufficiently secured, the measurement of the magnetic field acting in the planar direction is sufficiently performed It becomes possible.