u0438u043du0436u0435u043au0446u0438u043eu043du043du044bu0439 laser u043fu0435u0440u0435u043au043bu044eu0447u0430u0435u043cu044bu043c spectrum generation

摘要

the utility model relates to quantum electronics.u0438u043du0436u0435u043au0446u0438u043eu043du043du044bu0439 laser u043fu0435u0440u0435u043au043bu044eu0447u0430u0435u043cu044bu043c spectrum generation includes a substrate, one side of which is formed a ohmic contacton the other side of the substrate and the grown semiconductor quantum heterostructure, limited u0441u043au043eu043bu043eu0442u044bu043cu0438 faces containing an optical resonator.the quantum heterostructure on a substrate layer contains has the emitter n - type conductivity, a first u0432u043eu043bu043du043eu0432u043eu0434u043du044bu0439 layer, active areacontaining at least one quantum size the active layer in the form of a quantum hole, the second u0432u043eu043bu043du043eu0432u043eu0434u043du044bu0439 emitter layer, a layer of p - type conductivity.on the external surface of which are first and second u043eu043cu0438u0447u0435u0441u043au0438u0435 contacts separated by a dielectric area width of not less than 2 microns and form a section of the department of the laser, and the pump pulse duration.the length of the resonator length and the thickness of the section level lp (d layer quantum pit for the existence of at least two layers of u0440u0430u0437u043cu0435u0440u043du043eu0433u043e quantization in active area and, themeet certain produce ratios well. the technical result is a useful model is to increase the range of laser generation of up to 100 nm. 5, z. s - lu, 3).