首页> 外国专利> SOURCE OF ION BEAM BASED ON ELECTRON-CYCLOTRON RESONANT DISCHARGE PLASMA, HELD IN OPEN MAGNETIC TRAP

SOURCE OF ION BEAM BASED ON ELECTRON-CYCLOTRON RESONANT DISCHARGE PLASMA, HELD IN OPEN MAGNETIC TRAP

机译:基于电子-回旋共振放电等离子体的离子束源,在敞开式磁阱中保存

摘要

FIELD: physics.;SUBSTANCE: invention relates to forming a high-current ion beam by its extraction from a dense ECR discharge plasma created in an open magnetic trap by powerful radiation of a millimeter wavelength range. Developed device can provide efficient extraction of ions from a dense ECR discharge plasma and formation of high-current ion beams with low emittance and at the same time it can provide a transition to a regime of improved confinement of plasma in a trap with suppression of transverse transfer of plasma caused by flute instability. Developed ion source allows to form ion beams from a dense plasma with a current to an ampere ratio and an emittance value up to 0.01 π mm⋅mrad in normalized units.;EFFECT: formation of ion beams from a dense plasma.;4 cl, 2 dwg
机译:发明领域本发明涉及通过从毫米波波长范围的强辐射从开放磁阱中产生的致密ECR放电等离子体中提取大电流离子束来形成大电流离子束。开发的装置可以从密集的ECR放电等离子体中有效地提取离子,并形成低发射率的高电流离子束,同时,可以过渡到一种改进的捕集阱中等离子体限制的机制,从而抑制了横向干扰。凹槽不稳定引起的血浆转移。发达的离子源可以从稠密的等离子体形成离子束,电流至安培比,发射率值以归一化单位高达0.01πmm·mrad;效果:从稠密的等离子体形成离子束; 4 cl, 2 dwg

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